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#6 (2025) STWA60N028T: ST’s 1st deep trench superjunction MOSFET leads efficiency benchmark
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STWA60N028T, the first STMESH superjunction MOSFET to use a deep trench approach and to be manufactured on a 12-inch wafer. It features a low RDS(on) of 28 mΩ and supports a drain-source voltage (VDS of 600 V).
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